Discrete power MOSFET / IGBT
Automotive-grade discrete devices for OBC, DC-DC and auxiliary drives.
SiCIGBT
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Quantity
Typical specifications
- Voltage class
- 40–1,200 V
- Package
- TO-247 / D2PAK / TOLL
- Switching device
- Si / SiC / GaN
Values are indicative ranges for this component type. Final specifications are confirmed in our quotation.
Related components
IGBT power module
Six-pack or half-bridge IGBT module for 400V traction inverters.
SiC MOSFET power module
Silicon-carbide module for high-efficiency 800V inverters and fast chargers.
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